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Physical Review B

Volumn 48, Issue 7, 1993, Pages 4612-4615

Different Fermi-level pinning behavior on n- and p-type GaAs(001)

(4) Pashley, M D a Haberern, K W a Feenstra, R M b Kirchner, P D b

a PHILIPS RESEARCH LABORATORIES (Netherlands)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000623508 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.48.4612 Document Type: Article

Times cited : (126)

References (11)

1
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- Pashley, M.D.¹ Haberern, K.W.²

2
- 0000884913
- Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular-beam epitaxially grown GaAs(001)
- (1992) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.10 , pp. 1874
- Pashley, M.D.¹ Haberern, K.W.² Feenstra, R.M.³

3
- 35949011476
- (1988) Phys. Rev. Lett. , vol.60 , pp. 2176
- Pashley, M.D.¹ Haberern, K.W.² Friday, W.³ Woodall, J.M.⁴ Kirchner, P.D.⁵

4
- 0026900140
- (1992) Ultramicroscopy , vol.42-44 , pp. 1281
- Pashley, M.D.¹ Haberern, K.W.²

5
- 0001379442
- Tunneling spectroscopy of the GaAs(110) surface
- (1987) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.5 , pp. 923
- Feenstra, R.M.¹ Stroscio, J.A.²

6
- 0000853321
- (1989) Phys. Rev. B , vol.39 , pp. 7744
- Mårtensson, P.¹ Feenstra, R.M.²

7
- 84926915465
- M. D. Pashley and K. W. Haberern, in Semiconductor Interfaces at the Sub-nanometer Scale, Vol. 243 of NATO Advanced Study Institute, Series E, edited by H. W. M. Salemink and M. D. Pashley (Kluwer, Dordrecht, 1993), p. 63.

8
- 0004005306
- Wiley, New York
- (1981) 1981 Physics of Semiconductor Devices , pp. 74-84
- Sze, S.M.¹

9
- 84926878307
- The distribution of intrinsic states due to steps on GaAs(110) has recently been measured by STM [R. M. Feenstra, A. Vaterlaus, E. T. Yu, P. D. Kirchner, C. L. Lin, J. M. Woodall, and G. D. Pettit, in Semiconductor Interfaces at the Sub-nanometer Scale (Ref. 7), p. 127].

10
- 0000873829
- The advanced unified defect model for Schottky barrier formation
- (1988) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.6 , pp. 1245
- Spicer, W.E.¹ Liliental-Weber, Z.² Weber, E.³

11
- 0003241465
- Kelvin probe and synchrotron radiation study of surface photovoltage and band bending at metal/GaAs (100) interfaces
- (1992) Applied Surface Science , vol.56-58 , pp. 142
- Mao, D.¹ Kahn, A.² Le Lay, G.³ Marsi, M.⁴ Hwu, Y.⁵ Margaritondo, G.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.