Thickness and composition determination of MBE-grown strained multiple quantum well structures by x-ray diffraction

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4086, Issue , 2000, Pages 76-81

  Usher, Brian F ^a   Zhou, D ^a  

^a LA TROBE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; GALLIUM ARSENIDE; GROUP THEORY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; TRACKING (POSITION); X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

COMPOSITION DETERMINATION; DOUBLE CRYSTAL X-RAY DIFFRACTION; DYNAMICAL SIMULATION; GAAS SUBSTRATES; MULTIPLE QUANTUM-WELL STRUCTURES; NEW APPROACHES; SATELLITE PEAKS; X RAY ROCKING CURVE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0004839549     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.408332     Document Type: Conference Paper

References (9)

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