Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2640-2648

  Benzaquen, R ^a,b   Roth, A P ^a,b   Leonelli, R ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000303077     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361134     Document Type: Article

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