SCFL-Compatible 40-Gbit/s RTD/HEMT selector circuit

IEICE Transactions on Electronics

Volumn E83-C, Issue 10, 2000, Pages 1690-1692

  Sano, Kimikazu ^a   Murata, Koichi ^a   Matsuzak, Hideaki ^a  

^a NTT Network Innovation Laboratories   (Japan)

Author keywords

Hemts; Lightwave communications; Resonant tunneling diodes (rtds); SCFL; Selector circuit

Indexed keywords

EID: 0004734879     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. N. Shimizu, T. Nagatsuma, M. Shinagawa, and T. Waho, "Picosecond-switching of Ino.saGao.yAs/AlAs resonanttunneling diodes measured by electro-optic sampling technique," IEEE Electron Device Lett., vol.16, no.6, pp.262264, 1995.
2. E. Özaby, D.M. Bloom, D.H. Chow, and J.N. Schulman, "1.7-ps, microwave, integratcd-circuit-compatible In As/ AlSb resonant tunneling diodes," IEEE Electron Device Lett., vol.14, no.8, pp.400-402, 1993.
3. K. Sano, K. Murata, T. Otsuji, T. Akeyoshi, N. Shimizu, and E. Sano, "80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunneling diodes and unitravellingcarrier photodiode," IEE Electron. Lett., vol.35, no.16, pp. 1376-1377, 1999.
4. K. Sano, K. Murata, T. Akeyoshi, N. Shimizu, T. Otsuji, M. Yamamoto, T. Ishibashi, and E. Sano, "Ultrafast optoelectronic circuit using resonant tunneling diodes and unitravelling-carrier photodiode," IEE Electron. Lett., vol.34, no.2, pp.215-217, 1998.
5. K. Maezawa, H. Matsuzaki, J. Osaka, M. Yamamoto, and T. Otsuji, "A large output voltage swing of a resonant tunneling flip-flop circuit employing a monostable-bistable transition logic element (MOBILE)," Jpn. J. Appl. Phys., vol.37, no.llA, pp.L1286-L1287, 1998.
6. K. Maezawa, H. Matsuzaki, M. Yamamoto, and T. Otsuji, "High-speed and low-power operation of a resonant tunneling logic gate MOBILE," IEEE Electron Device Lett., vol.19, no.3, pp.80-82, 1998.
7. E. Sano and Y. Yamane, "InP-bascd lightwave communication ICs for 40 Gbit/s and beyond," IEICE Trans. Electron., vol.E82-C, no.ll, pp.1879-1885, Nov. 1999
8. T. Takada, H. Ohtsuka, and M. Ohhata, "A new interfacing "SCFL-interfacing" for ultra-high-speed logic,ICs," GaAs 1C Symposium 1990 Tech. Dig., pp.211-214, 1990.
9. K. Maezawa and T. Mizutani, "A new resonant tunneling logic gate employing monostable-bistable transition," Jpn. J. Appl. Phys., vol.32, no.lA/B, pp. L42-L44, 1993.
10. H. Matsuzaki, T. Itoh, and M. Yamamoto, "A novel highspeed flip-flop circuit using RTDs and HEMTs," Proceedings Ninth Great Lakes Symposium on VLSII pp.154-157, Michigan, 1999.
11. T. Enoki, H. Yokoyama, Y. Umeda, and T. Otsuji, "Ultrahigh-speed integrated circuits using InP-based HEMTs," Jpn. J. Appl. Phys., vol.37, no.3B, pp.1359-1364, 1998.