Picosecond-Switching Time of In0.53Ga0.47As/AIAs Resonant-Tunneling Diodes Measured by Electro-Optic Sampling Technique

IEEE Electron Device Letters

Volumn 16, Issue 6, 1995, Pages 262-264

  Naofumi Shimizu, N S ^a   Nagatsuma, Tadao ^a   Shinagawa, Mitsuru ^a   Waho, Takao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPLANAR WAVEGUIDE; ELECTRO OPTIC SAMPLING TECHNIQUE; HIGH CURRENT DENSITY; PEAK CURRENT DENSITY; PEAK TO VALLEY RATIO; PICOSECOND SWITCHING TIME; RESONANT TUNNELING DIODES;

CURRENT DENSITY; ELECTRODES; ELECTRON TUNNELING; ETCHING; LASER PULSES; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SWITCHING; WAVEGUIDES;

TUNNEL DIODES;

EID: 0029327836     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.790729     Document Type: Article

References (9)

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