1.7-ps, Microwave, Integrated-Circuit-Compatible InAs/AlSb Resonant Tunneling Diodes

IEEE Electron Device Letters

Volumn 14, Issue 8, 1993, Pages 400-402

  Ozbay E ^a   Bloom, David M ^a   Chow, D H ^b   Schulman, J N ^b  

^a STANFORD UNIVERSITY   (United States)

^b Hughes Research Laborato ries ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTROOPTIC SAMPLING TECHNIQUES; PEAK CURRENT DENSITIES; PEAK-TO-VALLEY RATIOS (PVRS); RESONANT TUNNELING DIODES (RTDS); SWITCHING TRANSITION TIMES;

SEMICONDUCTOR DIODES;

EID: 0027641965     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.225592     Document Type: Article

References (11)

1. D. H. Chow, J. N. Schulman, E. Özbay, and D. M. Bloom, “Investigation of In 0. 53 Ga 0.47as/a1as resonant tunneling diodes for high speed switching,” Appl. Phys. Lett., vol. 61, no. 14, p. 1685, 1992.
2. D. H. Chow, J. N. Schulman, E. Özbay, and D. M. Bloom, “High speed InAs/AlSb and InGaAs/AlAs Resonant Tunneling Diodes,” in Proc. Fall 1992 Meeting Mater. Res. Soc. Conf. (Boston).
3. S. K. Diamond et al., “Resonant tunneling diodes for switching applications,” Appl. Phys. Lett., vol. 64, pp. 153–155, 1989.
4. T. P. E. Broekaert and C. G. Fonstad, “In 0.53 Ga 0. 47 As/AlAs resonant tunneling diodes with peak current densities in excess of 450 kA/cm 2,” J. Appl. Phys., vol. 68, no. 15, pp. 4310–4312, 1990.
5. J. D. Soderstrom et al., “Growth and characterization of high-current density, high-speed InAs/AlSb resonant tunneling diodes,” Appl. Phys. Lett., vol. 58, p. 275, 1991.
6. E. R. Brown et al., “Oscillaitons up to 712 GHz in InAs/AlSb resonant-tunneling diodes,” Appl. Phys. Lett., vol. 58, p. 2291, 1991.
7. E. R. Brown et al., “High-speed resonant tunneling diodes made from the In 0.53 Ga 0.47 As/AlAs material system,” Proc. SPIE, vol. 1288, p. 122, 1990.
8. E. Ozbay, S. K. Diamond, and D. M. Bloom, “Pulse forming and triggering using resonant tunneling diode structures,” Electron. Lett., vol. 26, p. 1046, 1990.
9. E. Ozbay and D. M. Bloom, “110 GHz monolithic resonant tunneling diode trigger circuit,” IEEE Electron Device Lett., vol. 12, pp. 480–482, 1991.
10. J. F. Whitaker, G. A. Mourou, T. C. L. G. Sollner, and W. D. Goodhue, “Picosecond switching time measurement of a resonant tunneling diode,” Appl. Phys. Lett., vol. 53, p. 385, 1988.
11. K. J. Weingarten, M. J. W. Rodwell, and D. M. Bloom, “Picosecond optical sampling of GaAs integrated circuits,” IEEE J. Quantum Electron., vol. 24, no. 2, pp. 198–220, 1988.