A new resonant tunneling logic gate employing monostable-bistable transition

Japanese Journal of Applied Physics

Volumn 32, Issue 1 A, 1993, Pages L42-L44

  Maezawa, Koichi ^a   Mizutani, Takashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

AlAs; Bistable; Fanout; GaAs; Junction FET; Logic gate; Resonant tunneling diode

Indexed keywords

ELECTRON RESONANCE; ELECTRON TUNNELING; JUNCTION GATE FIELD EFFECT TRANSISTORS; NEGATIVE RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; STABILITY; VOLTAGE CONTROL;

ALUMINUM ARSENIDE; BISTABILITY; FANOUT; NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICES; RESONANT TUNNELING DIODE;

LOGIC GATES;

EID: 0027283293     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L42     Document Type: Article

References (9)

1. T. Shibata and T. Ohmi: 1991 IEDM Tech. Dig. (1991) 919.
2. K. Obermayer, W. G. Teich and G. Mahler: Phys. Rev. B 37 (1988) 8096.
3. J. N. Randall, M. A. Reed and Y. C. Kao: J. Vac. Sci. and Tech- nol. B 8 (1990) 1348.
4. N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu and H. Nishi: Jpn. J. Appl. Phys. 24 (1985) L853.
5. F. Capasso, S. Sen, F. Beltram, L. M. Lunardi, A. S. Vengurlekar, P. Smith, N. J. Shah, R. J. Malik and A. Y. Cho: IEEE Trans. Electron Devices 36 (1989) 2065.
6. T. Waho, K. Maezawa and T. Mizutani: Jpn. J. Appl. Phys. 30 (1991) L2018.
7. W. B. Kinard, M. H. Weichold and W. P. Kirk: J. Vac. Sci. and Technol. B 8 (1990) 393.
8. E. Goto: Proc. IRE 47 (1959) 1304.
9. Y. Harada, H. Nakane, N. Miyamoto, U. Kawabe, E. Goto and T. Soma: IEEE Trans. Magn. MAG-23 (1987) 3801.