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Volumn 39, Issue 12, 1999, Pages 1817-1822

Effects of InGaP heteropassivation on reliability of GaAs HBTs

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EID: 0004631496     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00190-0     Document Type: Article
Times cited : (9)

References (17)
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  • 8
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  • 10
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    • Hydrogen-related burn-in in GaAs/AlGaAs HBT's and implications for reliability
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    • Reliability inverstigation of InGaP/GaAs heterojunction bipolar transistors
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.