-
1
-
-
0025577022
-
Current induced degradation of Be-doped AlGaAs/GaAs HBT and its suppression by Zn diffusion into extrinsic base layer
-
Nakajima O, Ito H, Nagata K. Current induced degradation of Be-doped AlGaAs/GaAs HBT and its suppression by Zn diffusion into extrinsic base layer Tech Dig IEDM 1990;673.
-
(1990)
Tech Dig IEDM
, pp. 673
-
-
Nakajima, O.1
Ito, H.2
Nagata, K.3
-
2
-
-
0026172098
-
Surface and perimeter recombination in GaAs diodes: An experimental and theoretical investigation
-
Dodd PE, Stellwag TB, Melloch MR, Lundstrom MS. Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigation. IEEE Trans Electron Device 1991;38(6):1253.
-
(1991)
IEEE Trans Electron Device
, vol.38
, Issue.6
, pp. 1253
-
-
Dodd, P.E.1
Stellwag, T.B.2
Melloch, M.R.3
Lundstrom, M.S.4
-
3
-
-
0346253448
-
1-xAs layers grown by molecular beam epitaxy
-
1-xAs layers grown by molecular beam epitaxy. Appl Phys Lett 1987;51:1265.
-
(1987)
Appl Phys Lett
, vol.51
, pp. 1265
-
-
Adachi, S.1
Yamahata, S.2
-
4
-
-
0022689458
-
Gate metallization sinking into the active channel in Ti/W/Au metallized power MESFETs
-
Canali C, Castaldo F, Fantini F, Ogliari D, Umena L, Zanoni E. Gate metallization sinking into the active channel in Ti/W/Au metallized power MESFETs. IEEE Electron Device Lett 1996;EDL-17:185.
-
(1996)
IEEE Electron Device Lett
, vol.EDL-17
, pp. 185
-
-
Canali, C.1
Castaldo, F.2
Fantini, F.3
Ogliari, D.4
Umena, L.5
Zanoni, E.6
-
5
-
-
0026168877
-
High performance MOCVD grown AlGaAs/ GaAs heterojunction bipolar transistors with carbon doped base
-
Wang GW, Pierson RL, Asbeck PM, Wang KC, Wang NL, Nubling R, Chang MF, Shastry SK, Hill DS, Salerno JP. High performance MOCVD grown AlGaAs/ GaAs heterojunction bipolar transistors with carbon doped base. IEEE Electron Device Lett 1991;12:347.
-
(1991)
IEEE Electron Device Lett
, vol.12
, pp. 347
-
-
Wang, G.W.1
Pierson, R.L.2
Asbeck, P.M.3
Wang, K.C.4
Wang, N.L.5
Nubling, R.6
Chang, M.F.7
Shastry, S.K.8
Hill, D.S.9
Salerno, J.P.10
-
6
-
-
0025446457
-
Carbon-doped base GaAs/AlGaAs HBTs grown by MOMBE and MOCVD
-
Hobson WS, Ren F, Asbeck CR, Pearton SJ, Fullowan TR, Lothian J, Jordan AS, Lunardi LM. Carbon-doped base GaAs/AlGaAs HBTs grown by MOMBE and MOCVD. IEEE Electron Device Lett 1990;11:241.
-
(1990)
IEEE Electron Device Lett
, vol.11
, pp. 241
-
-
Hobson, W.S.1
Ren, F.2
Asbeck, C.R.3
Pearton, S.J.4
Fullowan, T.R.5
Lothian, J.6
Jordan, A.S.7
Lunardi, L.M.8
-
7
-
-
0028517967
-
Hot carrier induced bipolar transistor degradation due to base dopant compensation by hydrogen: Theory and experiment
-
Quon D, Gopi PK, Sonek GJ. Hot carrier induced bipolar transistor degradation due to base dopant compensation by hydrogen: theory and experiment. IEEE, Trans Electron Device 1994;41(10):1824.
-
(1994)
IEEE, Trans Electron Device
, vol.41
, Issue.10
, pp. 1824
-
-
Quon, D.1
Gopi, P.K.2
Sonek, G.J.3
-
8
-
-
0040312279
-
Base and collector leakage current of AlGaAs/GaAs heterojunction bipolar transistors
-
Liou JJ, Huang CI, Bayraktarogln B, Parab KB. Base and collector leakage current of AlGaAs/GaAs heterojunction bipolar transistors. J Appl Phys 1994;76(5):3187.
-
(1994)
J Appl Phys
, vol.76
, Issue.5
, pp. 3187
-
-
Liou, J.J.1
Huang, C.I.2
Bayraktarogln, B.3
Parab, K.B.4
|