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Volumn 38, Issue 12, 1998, Pages 1907-1912

Degradation of AlGaAs/GaAs HBTs induced by hot carriers

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTRIC CURRENTS; ETCHING; HOT CARRIERS; PASSIVATION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR JUNCTIONS; SILICON NITRIDE;

EID: 0032314982     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00187-5     Document Type: Article
Times cited : (2)

References (9)
  • 1
    • 0025577022 scopus 로고
    • Current induced degradation of Be-doped AlGaAs/GaAs HBT and its suppression by Zn diffusion into extrinsic base layer
    • Nakajima O, Ito H, Nagata K. Current induced degradation of Be-doped AlGaAs/GaAs HBT and its suppression by Zn diffusion into extrinsic base layer Tech Dig IEDM 1990;673.
    • (1990) Tech Dig IEDM , pp. 673
    • Nakajima, O.1    Ito, H.2    Nagata, K.3
  • 2
    • 0026172098 scopus 로고
    • Surface and perimeter recombination in GaAs diodes: An experimental and theoretical investigation
    • Dodd PE, Stellwag TB, Melloch MR, Lundstrom MS. Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigation. IEEE Trans Electron Device 1991;38(6):1253.
    • (1991) IEEE Trans Electron Device , vol.38 , Issue.6 , pp. 1253
    • Dodd, P.E.1    Stellwag, T.B.2    Melloch, M.R.3    Lundstrom, M.S.4
  • 3
    • 0346253448 scopus 로고
    • 1-xAs layers grown by molecular beam epitaxy
    • 1-xAs layers grown by molecular beam epitaxy. Appl Phys Lett 1987;51:1265.
    • (1987) Appl Phys Lett , vol.51 , pp. 1265
    • Adachi, S.1    Yamahata, S.2
  • 7
    • 0028517967 scopus 로고
    • Hot carrier induced bipolar transistor degradation due to base dopant compensation by hydrogen: Theory and experiment
    • Quon D, Gopi PK, Sonek GJ. Hot carrier induced bipolar transistor degradation due to base dopant compensation by hydrogen: theory and experiment. IEEE, Trans Electron Device 1994;41(10):1824.
    • (1994) IEEE, Trans Electron Device , vol.41 , Issue.10 , pp. 1824
    • Quon, D.1    Gopi, P.K.2    Sonek, G.J.3
  • 8
    • 0040312279 scopus 로고
    • Base and collector leakage current of AlGaAs/GaAs heterojunction bipolar transistors
    • Liou JJ, Huang CI, Bayraktarogln B, Parab KB. Base and collector leakage current of AlGaAs/GaAs heterojunction bipolar transistors. J Appl Phys 1994;76(5):3187.
    • (1994) J Appl Phys , vol.76 , Issue.5 , pp. 3187
    • Liou, J.J.1    Huang, C.I.2    Bayraktarogln, B.3    Parab, K.B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.