Current status of reliability of InGaP/GaAs HBTs

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1605-1610

  Ueda, O ^a   Kawano, A ^a   Takahashi, T ^a   Tomioka, T ^a   Fujii, T ^a   Sasa, S ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

MICROTWIN LIKE DEFECT FORMATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031245336     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00112-3     Document Type: Article

References (22)