Long-term base current instability in AlGaAs/GaAs HBTs: Physical mechanisms, modeling, and SPICE simulation

Microelectronics Reliability

Volumn 38, Issue 5, 1998, Pages 709-725

  Liou, J J ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

BASE CURRENT INSTABILITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032065103     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00026-2     Document Type: Review

References (19)

1. Liou JJ, Principles and analysis of AlGaAs/GaAs heterojunction bipolar transistors, Boston: Artech House, 1996.
2. Ash MS, Gorten H. IEEE Transactions Reliability 1989;38:485.
3. Hafizi ME, Pawlowicz LM, Tran LT, Umemoto DK, Streit DC, Oki AK, Kim ME, Yen KH. Digest IEEE GaAs IC Symposium 1990;329.
4. Liou JJ, Advanced semiconductor device physics and modeling, Boston: Artech House, 1994.
5. Benton JL, Levinson M, Macrander AT, Temkin H, Kimberling LC. Applied Physics Letters 1984;45:566.
6. Liou JJ, Huang CI. Solid-State Electronics 1994;37:1349.
7. Sugahara H, Nagano J, Nittono T, Ogawa K. Digest IEEE GaAs IC Symposium 1993;115.
8. Henderson T, Hill D, Liu W, Costa D, Chau HF, Kim TS, Khatibzadeh A, Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors, Digest IEEE IEDM, 1994.
9. Maneux C, Labat N, Saysset N, Touboul A, Danto Y. Microelectronics and Reliability 1997;10/11:1707.
10. Rezazadeh AA, Ahmad T, Crouch MA. Microelectronics and Reliability 1997;10/11:1703.
11. Henderson T, Tutt M. Proceedings IEEE International Reliability Physics Symposium 1997;:253.
12. Liou JJ, Huang CI, Bayraktaroglu B. Journal Applied Physics 1994;76:3187.
13. Liu W. Solid-State Electronics 1993;36:885.
14. Zhou W, Sheu S, Liou JJ, Huang CI. Solid-State Electronics 1996;39:1709.
15. DAVINCI Manual, Palo Alto (CA): Technology Modeling Associates, 1995.
16. Hurkx GAM, Klaassen DBM, Knuvers MPG. IEEE Transactions Electronic Devices 1992;39:331.
17. Pollino P, Microelectronic reliability, Vol. II: Integrity assessment and assurance, Boston: Artech House, 1989, p. 388.
18. Henderson T. Model for degradation of GaAs/AlGaAs HBTs under temperature and current stress, Digest IEEE IEDM, 1995.
19. MEDICI Manual, Palo Alto, (CA): Technology Modeling Associates, 1993.