Scanning capacitance microscopy analysis of DRAM trench capacitors

Records of the IEEE International Workshop on Memory Technology, Design and Testing

Volumn , Issue , 1996, Pages 79-85

  Pey, K L ^a   Strausser, Y E ^b   Erickson, A N ^b   Leslie, A J ^a   Beh, M T F ^a   Sheng, T T ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b Digital Instruments   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; SUBSTRATES;

CONTACT FORMATION; DOPANT CONCENTRATIONS; DOPANT DISTRIBUTION; DOPANT REDISTRIBUTION; DYNAMIC RANDOM ACCESS MEMORY; SCANNING CAPACITANCE MICROSCOPY; SILICON SUBSTRATES; TRENCH CAPACITORS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0012437320     PISSN: 10874852     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MTDT.1996.782496     Document Type: Conference Paper

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