Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy

Journal of Crystal Growth

Volumn 167, Issue 3-4, 1996, Pages 440-445

  Behrend, J ^a   Wassermeier, M ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ATOMIC STRUCTURE; HETEROJUNCTIONS; IMAGE RECONSTRUCTION; MONOLAYERS; MORPHOLOGY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ACTIVE AGENTS;

STEP EDGES; SURFACE RECONSTRUCTION;

MOLECULAR BEAM EPITAXY;

EID: 0030261241     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00273-4     Document Type: Article

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