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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

Dynamic properties of InAs self-assembled quantum dots evaluated by capacitance-voltage measurements

(4) Horiguchi, Naoto a Futatsugi, Toshiro a Nakata, Yoshiaki a Yokoyama, Naoki a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

Capacitance voltage measurement; Dynamic properties; Electron transport; InAs dot; Tunneling

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031221845 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.l1246 Document Type: Article

Times cited : (12)

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