Capacitance-voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1293-1295

  Martin, P M ^a   Belyaev, A E ^a   Eaves, L ^a   Main, P C ^a   Sheard, F W ^a   Ihn, T ^a   Henini, M ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTROSTATICS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CAPACITANCE-VOLTAGE CHARACTERISTICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032120714     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00019-7     Document Type: Article

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