Diffusion in GaAs and related compounds: Recent developments

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1079-1094

  Gosele U ^a,b   Tan, T Y ^a,b   Schultz, M ^a   Egger, U ^a   Werner, P ^a   Scholz, R ^a   Breitenstein, O ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b Duke University   (United States)

Author keywords

Arsenic self diffusion; Carbon diffusion; Charged point defects; Gallium isotope diffusion; Gallium self diffusion; Kick out mechanism; Superlattices

Indexed keywords

GALLIUM; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; ISOTOPES; POINT DEFECTS; SUPERLATTICES;

CARBON DIFFUSION; DIFFUSION MECHANISMS; IMPURITY DIFFUSION; ISOTOPE DIFFUSION; RELATED COMPOUNDS; SELF-DIFFUSION; SUB-LATTICES;

DIFFUSION;

EID: 0002174663     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1079     Document Type: Article

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