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Materials Chemistry and Physics

Volumn 44, Issue 1, 1996, Pages 45-50

Effects of p-type dopants on enhancing AlAs/GaAs superlattice disordering

(2) Tan, T Y a Gosele U M a,b

a Duke University (United States)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

Crystal surface region; Fermi level effect; Superlattice disordering reaction

Indexed keywords

ANNEALING; BERYLLIUM; CRYSTALS; DIFFUSION; FERMI LEVEL; ION IMPLANTATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SURFACES; ZINC;

ANNEALING AMBIENT; DOPANTS; FERMI LEVEL EFFECT; SUPERLATTICE DISORDERING REACTION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030129378 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/0254-0584(95)01654-D Document Type: Article

Times cited : (8)

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