Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy

Journal of Applied Physics

Volumn 79, Issue 8, 1996, Pages 4017-4023

  Kurishima, Kenji ^a   Kobayashi, Takashi ^a   Ito, Hiroshi ^a   Gösele, Ulrich ^b  

^a NTT CORPORATION   (Japan)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000893037     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361830     Document Type: Article

References (14)

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