Al-Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon-doped Al0.4Ga0.6As/GaAs superlattices: The As 4 pressure effect

Journal of Applied Physics

Volumn 74, Issue 4, 1993, Pages 2450-2460

  You, H M ^a   Tan, T Y ^a   Gosele U M ^a   Lee, S T ^b   Hofler G E ^c   Hsieh, K C ^c   Holonyak Jr , N ^c  

^a DUKE UNIVERSITY   (United States)

^b EASTMAN KODAK COMPANY   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

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Indexed keywords

EID: 0000165303     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.354682     Document Type: Article

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