Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 121-125

  Liu, J L ^a   Wang, K L ^a   Moore, C D ^a   Goorsky, M S ^a   Borca Tasciuc, T ^a   Chen, G ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); FILM GROWTH; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUPERLATTICES; SURFACE ACTIVE AGENTS; THERMAL CONDUCTIVITY OF SOLIDS;

SILICON GERMANIUM GRADED LAYERS;

SEMICONDUCTING FILMS;

EID: 0034224490     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00849-X     Document Type: Article

References (16)

1. Lee S.-M., Cahill D., Venkatasubramanian R. Appl. Phys. Lett. 70:1997;2957.
2. Chen G., Zhou S.Q., Yao D.-Y., et al. 17th Int. Thermoelectrics Conf., ICT98, Nagoya, Japan. 1998;202.
3. Hicks L.D., Dresselhaus M.S. Phys. Rev. B. 47:1993;12727.
4. Chen G. Phys. Rev. B. 57:1998;14958.
5. Balandin A., Wang K.L. Phys. Rev. B. 58:1998;1544.
6. Fitzgerald E.A., Xie Y.-H., Monroe D., et al. J. Vac. Sci. Technol. B. 10:1992;1807.
7. Li J., Peng C.S., Wu Y., Dai D.Y., Zhou J.M., Mai Z.H. Appl. Phys. Lett. 71:1997;3132.
8. Osten H.J., Bugiel E. Appl. Phys. Lett. 70:1997;2813.
9. Liu J.L., Moore C.D., U'Ren G.D., et al. Appl. Phys. Lett. 75:1999;1586.
10. Schimmel D. J. Electrochem. Soc. 126:1979;479.
11. Cahill D.G. Rev. Sci. Instrum. 61:1990;802.
12. Fewster P.F. Semicond. Sci. Technol. 8:1993;1915.
13. Tournie E., Ploog K. Thin Solid Films. 231:1993;43.
14. Abstreiter G. Thin Solid Films. 183:1989;1.
15. Brugger H., Friess E.F., Abstreiter G., Kasper E., Kibbel H. Semicond. Sci. Technol. 3:1988;1166.
16. Schorer R., Friess E., Eberl K., Abstreiter G. Phys. Rev. B. 44:1991;1772.