Optical and magnetic resonance characterization of undoped and doped wurtzite GaN films deposited on sapphire substrates

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 185-188

  Freitas Jr , J A ^a   Kennedy, T A ^a   Glaser, E R ^a   Carlos, W E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; IMPURITIES; MAGNESIUM; MAGNETIC RESONANCE MEASUREMENT; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

DEFECT SENSITIVE TECHNIQUES; SHALLOW ACCEPTOR; SHALLOW DONOR; WURTZITE GALLIUM NITRIDE (GAN) FILMS;

OPTICAL FILMS;

EID: 0031079389     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00163-3     Document Type: Article

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