Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 437-440

  Schubert, M ^a,b   Kasic, A ^a   Einfeldt, S ^c   Hommel, D ^c   Kohler U ^d   As, D J ^d   Off, J ^e   Kuhn, B ^e   Scholz, F ^e   Woollam, J A ^b  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c UNIVERSITY OF BREMEN   (Germany)

^d UNIVERSITY OF PADERBORN   (Germany)

^e UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001604875     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E     Document Type: Article

References (15)

1. D. E. ASPNES, in: Handbook of Optical Constants of Solids, Academic Press, New York 1998.
2. G. E. JELLISON, Thin Solid Films 313/314, 33 (1998), and references therein.
3. A. KASIC et al., Phys. Rev. B 62, 7365 (2000); J. Appl. Phys. 89, 3720 (2001); Appl. Phys. Lett. 78, 1526 (2001); Mater. Sci. Eng. B 82, 74 (2001).
4. A. KASIC et al., Phys. Rev. B 62, 7365 (2000); J. Appl. Phys. 89, 3720 (2001); Appl. Phys. Lett. 78, 1526 (2001); Mater. Sci. Eng. B 82, 74 (2001).
5. A. KASIC et al., Phys. Rev. B 62, 7365 (2000); J. Appl. Phys. 89, 3720 (2001); Appl. Phys. Lett. 78, 1526 (2001); Mater. Sci. Eng. B 82, 74 (2001).
6. A. KASIC et al., Phys. Rev. B 62, 7365 (2000); J. Appl. Phys. 89, 3720 (2001); Appl. Phys. Lett. 78, 1526 (2001); Mater. Sci. Eng. B 82, 74 (2001).
7. M. SCHUBERT et al., Phys. Rev. B 61, 8187 (2000); MRS Internet J. Nitride Semicond. Res. 4, 11 (1999); MRS Internet J. Nitride Semicond. Res. 5, W11.39 (2000); phys. stat. sol. (b) 216, 655 (1999); Mater. Sci. Eng. B 82, 178 (2001).
8. M. SCHUBERT et al., Phys. Rev. B 61, 8187 (2000); MRS Internet J. Nitride Semicond. Res. 4, 11 (1999); MRS Internet J. Nitride Semicond. Res. 5, W11.39 (2000); phys. stat. sol. (b) 216, 655 (1999); Mater. Sci. Eng. B 82, 178 (2001).
9. M. SCHUBERT et al., Phys. Rev. B 61, 8187 (2000); MRS Internet J. Nitride Semicond. Res. 4, 11 (1999); MRS Internet J. Nitride Semicond. Res. 5, W11.39 (2000); phys. stat. sol. (b) 216, 655 (1999); Mater. Sci. Eng. B 82, 178 (2001).
10. M. SCHUBERT et al., Phys. Rev. B 61, 8187 (2000); MRS Internet J. Nitride Semicond. Res. 4, 11 (1999); MRS Internet J. Nitride Semicond. Res. 5, W11.39 (2000); phys. stat. sol. (b) 216, 655 (1999); Mater. Sci. Eng. B 82, 178 (2001).
11. M. SCHUBERT et al., Phys. Rev. B 61, 8187 (2000); MRS Internet J. Nitride Semicond. Res. 4, 11 (1999); MRS Internet J. Nitride Semicond. Res. 5, W11.39 (2000); phys. stat. sol. (b) 216, 655 (1999); Mater. Sci. Eng. B 82, 178 (2001).
12. G. LEIBIGER et al., J. Appl. Phys. 89, 4927 (2001); J. Appl. Phys. 89, 294 (2001).
13. G. LEIBIGER et al., J. Appl. Phys. 89, 4927 (2001); J. Appl. Phys. 89, 294 (2001).
14. H. GRILLE, C. SCHNITTLER, and F. BECHSTEDT, Phys. Rev. B 61, 6091 (2000).
15. R. DIMITROV et al., J. Appl. Phys. 87, 3375 (2000).