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Volumn 56, Issue 23, 1997, Pages 14921-14924

Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001)

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EID: 0000527647     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.14921     Document Type: Article
Times cited : (21)

References (20)
  • 12
    • 0000815655 scopus 로고
    • For Al we use the von Barth-Car pseudopotential form of Ref. 15 while for Ga and As we borrow those of X. Gonze, P. Käckell, and M. Scheffler, Phys. Rev. B 41, 12 264 (1990).
    • (1990) Phys. Rev. B , vol.41 , pp. 12264
    • Gonze, X.1    Käckell, P.2    Scheffler, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.