Growth and doping of GaN directly on 6H-SiC by MBE

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 151-156

  Korakakis, D ^a   Sampath, A ^a   Ng, H M ^a   Morales, G ^a   Goepfert, I D ^a   Moustakas, T D ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON TRANSITIONS; ENERGY GAP; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICON CARBIDE; X RAY CRYSTALLOGRAPHY;

FULL WIDTH HALF MAXIMUM; GALLIUM NITRIDE; INTERMEDIATE BUFFER; LATTICE MISMATCH; RECOMBINATION PROPERTIES; X RAY ROCKING CURVE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726339     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)