Trapping and detrapping of electrons photoinjected from silicon to ultrathin SiO2 overlayers. II. In He, Ar, H2, N2, CO, and N2O

Journal of Applied Physics

Volumn 88, Issue 2, 2000, Pages 909-917

  Shamir, N ^a,b   Van Driel, H M ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b NUCLEAR RESEARCH CENTER NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001339080     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373754     Document Type: Article

References (8)

1. N. Shamir, J. G. Mihaychuk, and H. M. van Driel, J. Appl. Phys. 88, 896 (2000).
2. See, for example, D. P. Woodruff and T. A. Delchar, Modern Techniques of Surface Science, 2nd ed. (Cambridge U.P., Cambridge, 1994), Chap. 7.5.
3. J. Oudar, in Physics and Chemistry of Surfaces (Blackie, Glasgow, 1975), Chap. 4.
4. J. G. Mihaychuk, N. Shamir, and H. M. van Driel, Phys. Rev. B 59, 2164 (1999).
5. J. Bloch, J. G. Mihaychuk, and H. M. van Driel, Phys. Rev. Lett. 77, 920 (1996).
6. N. Shamir, J. G. Mihaychuk, H. M. van Driel, and H. J. Kreuzer, Phys. Rev. Lett. 82, 359 (1999).
7. P. J. Caplan, E. H. Poindexter, and S. R. Morrison, J. Appl. Phys. 53, 541 (1982).
8. J. Koresh and A. Soffer, J. Chem. Soc., Faraday Trans, 1 76, 2472 (1980).