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Volumn 4343, Issue , 2001, Pages 746-753

Characteristics of Ru buffer layer for EUVL mask patterning

Author keywords

Buffer layer; Etching selectivity; Extreme ultraviolet lithography; Mask patterning; Ru

Indexed keywords

ETCHING; ION BEAMS; MASKS; MULTILAYERS; RUTHENIUM;

EID: 0001317834     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436699     Document Type: Article
Times cited : (12)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.