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Volumn 4343, Issue , 2001, Pages 746-753
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Characteristics of Ru buffer layer for EUVL mask patterning
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Author keywords
Buffer layer; Etching selectivity; Extreme ultraviolet lithography; Mask patterning; Ru
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Indexed keywords
ETCHING;
ION BEAMS;
MASKS;
MULTILAYERS;
RUTHENIUM;
EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);
MASK PATTERNING;
PHOTOLITHOGRAPHY;
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EID: 0001317834
PISSN: 0277786X
EISSN: None
Source Type: Journal
DOI: 10.1117/12.436699 Document Type: Article |
Times cited : (12)
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References (8)
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