Doping properties of amphoteric C, Si, and Ge impurities in GaN and AlN

Acta Physica Polonica A

Volumn 90, Issue 4, 1996, Pages 735-738

  Boguslawski P ^a,b   Bernholc, J ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542502665     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.90.735     Document Type: Article

References (10)

1. R.F. Davis, Physica D 185, 1 (1993).
2. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76, 1363 (1994).
3. P. Bogusławski, J. Bernholc, to be published.
4. P. Bogusławski, E.M. Briggs, J. Bernholc, Appl. Phys. Lett., in press.
5. R. Cat, M. Parrinello, Phys. Rev. Lett. 55, 2471 (1985).
6. P. Bogusławski, E.M. Briggs, J. Bernholc, Phys. Rev. B 51, 17255 (1995).
7. G. Li, S. Rabii, unpublished (1992).
8. X. Gonze, R. Stumpf, M. Scheffler, Phys. Rev. B 44, 8503 (1991).
9. D.J. Chadi, K.J. Chang, Phys. Rev. Lett. 61, 873 (1988).
10. S. Fisher, C. Wetzel, E.E. Haller, B.K. Meyer, Appl. Phys. Lett. 67, 1298 (1995).