Nonconservative Ostwald ripening of dislocation loops in silicon

Applied Physics Letters

Volumn 73, Issue 20, 1998, Pages 2956-2958

  Huang, Y L ^a   Seibt, M ^a   Plikat, B ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001259484     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122642     Document Type: Article

References (32)

1. C. D. Meekison, Philos. Mag. A 69, 379 (1994).
2. H. Park, K. S. Jones, and M. E. Law, J. Electrochem. Soc. 141, 759 (1994).
3. M. Seibt, J. Imschweiler, and H.-A. Hefner, Semiconductor Silicon 1994, edited by H. R. Huff, W. Bergholz, and K. Sumino (The Electrochemical Society, Pennington, NJ, 1994), p. 720.
4. C. S. Rafferty, G. H. Gilmer, M. Jaraiz, D. J. Eaglesham, and J. M. Poate, Appl. Phys. Lett. 68, 2395 (1996).
5. C. Bonafos, D. Mathiot, and A. Claverie, J. Appl. Phys. 83, 3008 (1998).
6. C. D. Meekison, C. Hill, C. D. Marsh, D. P. Gold, D. R. Boys, and G. R. Booker, Inst. Phys. Conf. Ser. 117, 197 (1991).
7. J. K. Listaberger, K. S. Jones, and J. A. Slinkman, J. Appl. Phys. 73, 4815 (1993).
8. G. Z. Pan, K. N. Tu, and A. Prussin, Appl. Phys. Lett. 68, 1654 (1996).
9. G. Z. Pan, K. N. Tu, and A. Prussin, J. Appl. Phys. 81, 78 (1997).
10. C. Bonafos, M. Omri, B. deMauduit, G. BenAssayag, and A. Claverie, J. Appl. Phys. 82, 2855 (1997).
11. D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
12. N. E. B. Cowern, G. A. van de Walle, P. C. Zalm, and D. W. E. Vandenhout, Appl. Phys. Lett. 65, 2981 (1994).
13. A. Agarwal, T. E. Haynes, D. J. Eaglesham, H.-J. Gossmann, D. C. Jacobson, J. M. Poate, and Y. E. Erokhin, Appl. Phys. Lett. 70, 3332 (1997).
14. A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, and Y. E. Erokhin, Appl. Phys. Lett. 71, 3141 (1997).
15. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
16. M. Seibt and E. Spiecker, Solid State Phenom. 47-48, 205 (1995).
17. S. B. Herner, V. Krishnamoorthy, K. S. Jones, T. K. Mogi, M. O. Thompson, and H.-J. Gossmann, J. Appl. Phys. 81, 7175 (1997).
18. S. B. Herner, H.-J. Gossmann, F. H. Baumann, G. H. Gilmer, D. C. Jacobson, and K. S. Jones, Appl. Phys. Lett. 72, 67 (1998).
19. B. Burton and M. V. Speight, Philos. Mag. A 53, 385 (1985).
20. M. Omri, C. Bonafos, A. Claverie, A. Nejim, F. Christiano, D. Alquier, A. Martinez, and N. E. B. Cowern, Nucl. Instrum. Methods Phys. Res. B 120, 5 (1996).
21. C. Bonafos, D. Alquir, A. Martinez, D. Mathiot, and A. Claverie, Nucl. Instrum. Methods Phys. Res. B 112, 129 (1996).
22. A. C. Ajmera and G. A. Rozgonyi, Appl. Phys. Lett. 49, 1269 (1986).
23. A. C. Ajmera, G. A. Rozgonyi, and R. B. Fair, Appl. Phys. Lett. 52, 813 (1988).
24. M. Seibt, Y. L. Huang, and B. Plikat, Solid State Phenom. 57-58, 377 (1997).
25. D. R. Lim, C. S. Rafferty, and F. P. Klemens, Appl. Phys. Lett. 67, 2302 (1995).
26. J. Liu, V. Krishnamoorthy, H.-J. Gossmann, L. Rubin, M. E. Law, and K. S. Jones, Appl. Phys. Lett. 81, 1656 (1997).
27. It should be noted that, in general, vacancies will contribute to the growth and shrinkage of dislocation loops. For simplicity, we discuss in terms of self-interstitials only. However, the conclusions about the validity of non-conservative Ostwald ripening are not affected by this restriction.
28. H.-J. Gossmann, C. S. Rafferty, F. C. Unterwald, T. Boone, T. K. Mogi, M. O. Thompson, and H. S. Luftman, Appl. Phys. Lett. 67, 1558 (1995).
29. I concentration in equilibrium with a perfect dislocation loop of infinite radius.
30. T. Y. Tan and U. Gösele, Appl. Phys. A 37, 1 (1985).
31. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B 52, 16542 (1995).
32. Y.-L. Huang and M. Seibt (unpublished).