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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 129-132

TED of boron in the presence of EOR defects: The use of the theory of Ostwald ripening to calculate Si-interstitial supersaturation in the vicinity of extrinsic defects

(5) Bonafos, C a Alquier, D b Martinez, A b Mathiot, D c Claverie, A a

a CEMES CNRS (France)

b LAAS CNRS (France)

c ORANGE LABS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CRYSTAL DEFECTS; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); SILICON; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT DIFFUSIVITY; END OF RANGE (EOR) DEFECTS; OSTWALD RIPENING THEORY; SILICON INTERSTITIAL SUPERSATURATION; TRANSIENT ENHANCED DIFFUSION (TED);

ION IMPLANTATION;

EID: 0030563527 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(95)01017-3 Document Type: Article

Times cited : (5)

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