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Volumn 51, Issue 19, 1995, Pages 13150-13161

Relativistic electronic structure, effective masses, and inversion-asymmetry effects of cubic silicon carbide (3C-SiC)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0012905493     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.51.13150     Document Type: Article
Times cited : (37)

References (54)
  • 19
    • 84931539054 scopus 로고    scopus 로고
    • E. O. Kane, in Physics of III V Compounds, edited by R. K. Willardson and A. C. Beer, Semiconductors and Semimetals Vol. 1 (Academic, New York, 1966), p. 75.
  • 24
    • 84931539049 scopus 로고    scopus 로고
    • Semiconductors Physics of Group IV Elements and III V Compounds, edited by K. H. Hellwege and O. Madelung, Landolt Börnstein, New Series, Group III, Vol. 22, Pt. a (Springer, Berlin, 1982).
  • 36
    • 84931539048 scopus 로고    scopus 로고
    • Recently, Lambrecht et al. (Refs. 36 and 39)pointed out that literature values of experimental critical point energies may suffer from incorrect assignments. (Refs. 23, 37, and 38)(see Table 1).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.