Experimental determination of electron effective attenuation lengths in silicon dioxide thin films using synchrotron radiation: II. Effects of elastic scattering

Surface and Interface Analysis

Volumn 29, Issue 5, 2000, Pages 336-340

  Shimada, H ^a   Matsubayashi, N ^a   Imamura, M ^a   Suzuki, M ^b   Higashi, Y ^b   Ando, H ^b   Takenaka, H ^b   Kurosawa, S ^b   Tanuma, S ^c   Powell, C J ^d  

^a NATL INST OF MAT AND CHEM RES   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

^c JAPAN ENERGY CORPORATION   (Japan)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Inelastic mean free path; Photoemission; Polarization; Quantitative analysis; XPS

Indexed keywords

EID: 0001097497     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(200005)29:5<336::AID-SIA877>3.0.CO;2-W     Document Type: Article

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