Experimental determination of electron effective attenuation lengths in silicon dioxide thin films using synchrotron radiation: I. Data analysis and comparisons

Surface and Interface Analysis

Volumn 29, Issue 5, 2000, Pages 330-335

  Suzuki, M ^a   Ando, H ^a   Higashi, Y ^a   Takenaka, H ^a   Shimada, H ^b   Matsubayashi, N ^b   Imamura, M ^b   Kurosawa, S ^a   Tanuma, S ^c   Powell, C J ^d  

^a NTT Advanced Technology Corporation   (Japan)

^b NATL INST OF MAT AND CHEM RES   (Japan)

^c JAPAN ENERGY CORPORATION   (Japan)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Effective attenuation length; Inelastic mean free path; Photoemission; Silicon dioxide; Synchrotron radiation

Indexed keywords

EID: 0000225416     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(200005)29:5<330::AID-SIA876>3.0.CO;2-G     Document Type: Article

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