Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics

Journal of Applied Physics

Volumn 88, Issue 12, 2000, Pages 7067-7078

  Kim, H ^a   Glass, G ^a   Soares, J A N T ^a   Desjardins, P ^a   Greene, J E ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001327311     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1324701     Document Type: Article

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