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Volumn 89, Issue 1, 2001, Pages 194-205

Ultra-highly doped Si1-xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

(4) Kim, H a Glass, G a,b Desjardins, P a,c Greene, J E a

a University of Illinois at Urbana Champaign (United States)

b INTEL CORPORATION (United States)

c ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012539634 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1330244 Document Type: Article

Times cited : (9)

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