메뉴 건너뛰기




Volumn 17, Issue 2, 1999, Pages 354-362

Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0033440280     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581595     Document Type: Article
Times cited : (13)

References (32)
  • 5
    • 0030121728 scopus 로고    scopus 로고
    • Y. Kinoshita, K. Imai, H. Yoshida, H. Suzuki, T. Tatsumi, and T. Yamazaki, Proceedings of the International Electronic Devices Meeting, San Francisco, December, 1994, p. 441; Y. Kiyota, T. Nakamura, S. Suzuki, and T. Inada, IEEE Trans. Electron Devices 79C, 554 (1996).
    • (1996) IEEE Trans. Electron Devices , vol.79 C , pp. 554
    • Kiyota, Y.1    Nakamura, T.2    Suzuki, S.3    Inada, T.4
  • 24
    • 21844487728 scopus 로고
    • Y. Wang and R. J. Hamers, Appl. Phys. Lett. 66, 2057 (1995); J. Vac. Sci. Technol. A 13, 1431 (1995).
    • (1995) J. Vac. Sci. Technol. A , vol.13 , pp. 1431
  • 30
    • 85034531507 scopus 로고    scopus 로고
    • note
    • ss values were, typically, less than 300 Å.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.