Statistical simulation of MOSFETs using TCAD: Meshing noise problem and selection of factors

International Workshop on Statistical Metrology, Proceedings, IWSM

Volumn , Issue , 1998, Pages 10-13

  Shigyo, N ^a   Tanimoto, H ^a   Morishita, T ^a   Sugawara, K ^a   Wakita, N ^a   Asahi, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; STATISTICAL METHODS;

PRINCIPAL COMPONENT ANALYSIS (PCA); STATISTICAL SIMULATION; TECHNOLOGY COMPUTER AIDED DESIGN (TCAD);

MOSFET DEVICES;

EID: 0032263597     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)