High field hole velocity and velocity overshoot in silicon inversion layers

IEEE Electron Device Letters

Volumn 18, Issue 2, 1997, Pages 54-56

  Sinitsky, Dennis ^a   Assaderaghi, Fariborz ^a,b   Hu, Chenming ^a   Bokor, Jeffrey ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; MEASUREMENT ERRORS; MOS DEVICES; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN TO SOURCE VOLTAGE; GATE CURRENT; GATE TO SOURCE VOLTAGE; THRESHOLD VOLTAGE;

SEMICONDUCTING FILMS;

EID: 0031077059     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.553042     Document Type: Article

References (13)

1. P. K. Ko, "Approaches to scaling," in Advanced MOS Device Physics. New York: Academic, vol. 18, pp. 1-37, 1989.
2. R. Cohen and R. Muller, "Velocity of surface carriers in inversion layers of silicon," Solid State Electron., no. 1, pp. 35-40, Jan. 1980.
3. S. Takagi, M. Iwase, and A. Toriumi, "On the universality of inversion-layer mobility on N- and P-channel MOSFET's," in IEDM Tech. Dig., 1988, pp. 398-401.
4. F. Fang and A. Fowler, "Hot electron effects and saturation velocities in silicon inversion layers," J. Appl. Phys., vol. 41, no. 4, pp. 1825-1831, Mar. 1970.
5. F. Assaderaghi, P. K. Ko, and C. Hu, "Observation of velocity overshoot in silicon inversion layers," IEEE Electron Device Lett., vol. 14, Oct. 1993.
6. F. Assaderaghi, D. Sinitsky, H. Gaw, J. Bokor, P. K. Ko, and C. Hu, "Saturation velocity and velocity overshoot of inversion layer electrons and holes," in IEDM Tech. Dig., 1994, pp. 479-482.
7. MEDICI 2.0, TMA Inc., Palo Alto, CA.
8. Z. H. Liu, C. Hu, J. H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng, "Threshold voltage model for deep submicrometer MOSFET's," IEEE Trans. Electron Devices, vol. 40, pp. 86-95, Jan. 1993.
9. J. Chung, M. C. Jeng, J. E. Moon, A. T. Wu, T. Y. Chan, P. K. Ko, and C. Hu, "Deep-submicrometer MOS device fabrication using a photoresist ashing technique," IEEE Electron Device Lett., vol. 9, p. 186, 1988.
10. S. Teitel and J. Wilkins, "Ballistic transport and velocity overshoot in semiconductors: Part I - Uniform field effects," IEEE Trans. Electron Devices, vol. ED-30, pp. 150-153, Feb. 1983.
11. F. Assaderaghi, Ph.D. dissertation, Univ. of California, Berkeley, 1994.
12. K. Thornber, "Relation of drift velocity to low-field mobility and high-field saturation velocity," J. Appl. Phys., vol. 51, no. 3, pp. 2127-2136, 1980.
13. C. Jacoboni, C. Canali, G. Ottaviani, and A. Alberigi Quaranta, "A review of some charge transport properties of silicon," Solid State Electron., vol. 20, no. 4, pp. 77-89, 1977.