Simultaneous observation of SiO2 surface and SiO2/Si interface using self-assembled-monolayer island

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 SUPPL. B, 1998, Pages

  Komeda, Tadahiro ^a   Namba, Kenji ^a   Nishioka, Yasushiro ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

AFM; OTS; SAM; Si oxidation; Si surface; SiO2; Step flow; Steps

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SILICA; SURFACES;

SELF-ASSEMBLED-MONOLAYER ISLAND;

SEMICONDUCTING SILICON;

EID: 0032002737     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.L214     Document Type: Article

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