On the electronic properties of β-rhombohedral boron interstitially doped with 3d transition metal atoms

Journal of Alloys and Compounds

Volumn 262-263, Issue , 1997, Pages 372-380

  Werheit, H ^a   Schmechel, R ^a   Kueffel, V ^a   Lundstrom T ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BAND STRUCTURE; CHROMIUM; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; IRON; LIGHT ABSORPTION; NICKEL; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; VANADIUM;

DYNAMICAL CONDUCTIVITY; ELECTRON TRAPPING; INTERSTITIAL DOPING; SEEBECK COEFFICIENT;

ELECTRONIC PROPERTIES;

EID: 0031276034     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(97)00414-3     Document Type: Article

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