Enhancing the external quantum efficiency of porous silicon leds beyond 1% by a post-anodization electrochemical oxidation

Materials Research Society Symposium - Proceedings

Volumn 536, Issue , 1999, Pages 15-20

  Gelloz, B ^a   Nakagawa, T ^a   Koshida, N ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CARRIER CONCENTRATION; ELECTROCHEMISTRY; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY;

ELECTROCHEMICAL OXIDATION; EXTERNAL QUANTUM EFFICIENCY;

POROUS SILICON;

EID: 0032591629     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)

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