Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1407-1412

  Oguro, Tsuyoshi ^a,b   Koyama, Hideki ^a   Ozaki, Tsuyoshi ^a,c   Koshida, Nobuyoshi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b NEC CORPORATION   (Japan)

^c CASIO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTROLUMINESCENCE; ELECTRON TUNNELING; ELECTRONIC PROPERTIES; EXCITONS; GOLD; HOT CARRIERS; PHOTOLUMINESCENCE; POROUS SILICON; THERMAL EFFECTS;

CARRIER EXCITATION; CARRIER RADIATIVE RECOMBINATION; EXCITATION WAVELENGTH; POLARITY;

SEMICONDUCTOR DIODES;

EID: 0031079354     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363878     Document Type: Article

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