Pathway to depositing device-quality 50°C silicon nitride in a high-density plasma system

Journal of the Electrochemical Society

Volumn 146, Issue 6, 1999, Pages 2254-2257

  Farber, David G ^b   Bae, Sanghoon ^a   Okandan, Murat ^a   Reber, Douglas M ^b   Kuzma, Terence ^a   Fonash, Stephen J ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL BONDS; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SILICON NITRIDE; TEMPERATURE;

BREAKDOWN VOLTAGE; HIGH DENSITY PLASMA SYSTEM; SILANE FLOW RATES;

DIELECTRIC FILMS;

EID: 0032675267     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391923     Document Type: Article

References (8)

1. M. Maeda and Y. Arita, J. Appl. Phys., 53, 6852 (1982).
2. Y. Jeon, H. Lee, and S. Joo, J. Electron, Mater., 21, 1119 (1992).
3. W. Lau and S. Fonash, J. Appl. Phys., 66, 2767 (1989).
4. P. Arnett and D. Dimaria, J. Appl. Phys., 47, 2092 (1976).
5. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley & Sons, New York (1982).
6. S. W. Hsieh, C. Y. Chang, Y. S. Lee, C. W. Lin, and S. C. Hsu, J. Appl. Phys., 76, 3645 (1994).
7. G. N. Parsons, J. H. Souk, and J. Batey, J. Appl. Phys., 70, 1553 (1991).
8. J. Mort and F. Jansen, Plasma Deposited Thin Films, 2nd ed., CRC Press, Boca Ration, FL (1986).