Physically based predictive model of oxide charging

International Integrated Reliability Workshop Final Report

Volumn , Issue , 1996, Pages 134-141

  Conley Jr , J F ^a   Lenahan, P M ^a   Wallace, B D ^a  

^a DYNAMICS RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLOR CENTERS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MOS DEVICES; MOSFET DEVICES; OXIDES; PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; SILICA;

OXIDE CHARGING;

GATES (TRANSISTOR);

EID: 0030349803     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (34)