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Journal of Applied Physics

Volumn 82, Issue 7, 1997, Pages 3462-3468

Recovery of time-dependent dielectric breakdown lifetime of thin oxide films by thermal annealing

(3) Furukawa, Taisuke a Yuuki, Akimasa a Ono, Kouichi a

a MITSUBISHI ELECTRIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006008763 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.365662 Document Type: Article

Times cited : (9)

References (18)

1
- 0001457468
- H. Yamada, J. Vac. Sci. Technol. B 12, 3112 (1994).
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 3112
- Yamada, H.¹

2
- 0028553484
- Japan Society of Applied Physics, Tokyo
- T. Nakanishi, Y. Sato, M. Okuno, and K. Takasaki, in 1994 Symposium on VLSI Tecnology Digest of Technical Papers (Japan Society of Applied Physics, Tokyo, 1994) pp. 45-46.
- (1994) 1994 Symposium on VLSI Tecnology Digest of Technical Papers , pp. 45-46
- Nakanishi, T.¹ Sato, Y.² Okuno, M.³ Takasaki, K.⁴

3
- 0030079695
- T. Arakawa, R. Matsumoto, and A. Kita, Jpn. J. Appl. Phys., Part 1 35, 1491 (1996).
- (1996) Jpn. J. Appl. Phys., Part 1 , vol.35 , pp. 1491
- Arakawa, T.¹ Matsumoto, R.² Kita, A.³

4
- 0027239373
- K. Makihara, A. Teramoto, K. Nakamura, M. Y. Kwon, M. Morita, and T. Ohmi, Jpn. J. Appl. Phys., Part 1 32, 294 (1993).
- (1993) Jpn. J. Appl. Phys., Part 1 , vol.32 , pp. 294
- Makihara, K.¹ Teramoto, A.² Nakamura, K.³ Kwon, M.Y.⁴ Morita, M.⁵ Ohmi, T.⁶

5
- 21544458715
- D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993).
- (1993) J. Appl. Phys. , vol.73 , pp. 3367
- DiMaria, D.J.¹ Cartier, E.² Arnold, D.³

6
- 0028515004
- D. J. Dumin, J. R. Maddux, R. S. Scott, and R. Subramoniam, IEEE Trans. Electron Devices ED-41, 1570 (1994).
- (1994) IEEE Trans. Electron Devices , vol.ED-41 , pp. 1570
- Dumin, D.J.¹ Maddux, J.R.² Scott, R.S.³ Subramoniam, R.⁴

7
- 0029289815
- D. J. Dumin, S. K. Mopuri, S. Vanchinathan, R. S. Scott, R. Subramoniam, and T. G. Lewis, IEEE Trans. Electron Devices ED-42, 760 (1995).
- (1995) IEEE Trans. Electron Devices , vol.ED-42 , pp. 760
- Dumin, D.J.¹ Mopuri, S.K.² Vanchinathan, S.³ Scott, R.S.⁴ Subramoniam, R.⁵ Lewis, T.G.⁶

8
- 0028430427
- K. F. Schuegraf and C. Hu, IEEE Trans. Electron Devices ED-41, 761 (1994).
- (1994) IEEE Trans. Electron Devices , vol.ED-41 , pp. 761
- Schuegraf, K.F.¹ Hu, C.²

9
- 84941504025
- I. C. Chen, S. E. Holland, and C. Hu, IEEE Trans. Electron Devices ED-32, 413 (1985).
- (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 413
- Chen, I.C.¹ Holland, S.E.² Hu, C.³

10
- 0021477131
- S. Holland, I. C. Chen, T. P. Ma, and C. Hu, IEEE Electron Device Lett. EDL-5, 302 (1984).
- (1984) IEEE Electron Device Lett. , vol.EDL-5 , pp. 302
- Holland, S.¹ Chen, I.C.² Ma, T.P.³ Hu, C.⁴

11
- 0009714428
- K. Nojiri and K. Tsunokuni, J. Vac. Sci. Technol. B 11, 1819 (1993).
- (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 1819
- Nojiri, K.¹ Tsunokuni, K.²

12
- 0026173798
- H. Muto, H. Fujii, K. Nakanishi, and S. Ikeda, IEEE Trans. Electron Devices ED-38, 1296 (1991).
- (1991) IEEE Trans. Electron Devices , vol.ED-38 , pp. 1296
- Muto, H.¹ Fujii, H.² Nakanishi, K.³ Ikeda, S.⁴

13
- 0026990038
- R. A. B. Devine, Jpn. J. Appl. Phys., Part 1 31, 4411 (1992).
- (1992) Jpn. J. Appl. Phys., Part 1 , vol.31 , pp. 4411
- Devine, R.A.B.¹

14
- 0024913722
- A. J. Lelis, T. R. Oldham, H. E. Boesch, Jr., and F. B. McLean, IEEE Trans. Nucl. Sci. NS-36, 1808 (1989).
- (1989) IEEE Trans. Nucl. Sci. , vol.NS-36 , pp. 1808
- Lelis, A.J.¹ Oldham, T.R.² Boesch Jr., H.E.³ McLean, F.B.⁴

15
- 0003610719
- Wiley-Interscience, New York
- E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley-Interscience, New York, 1982).
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

16
- 0009649468
- H. Uchida and T. Ajioka, Appl. Phys. Lett. 51, 433 (1987).
- (1987) Appl. Phys. Lett. , vol.51 , pp. 433
- Uchida, H.¹ Ajioka, T.²

17
- 0021482910
- M-S. Liang, C. Chang, Y. T. Yeow, C. Hu, and R. W. Brodersen, IEEE Trans. Electron Devices ED-31, 1238 (1984).
- (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1238
- Liang, M.-S.¹ Chang, C.² Yeow, Y.T.³ Hu, C.⁴ Brodersen, R.W.⁵

18
- 4143143827
- D. L. Griscom, Nucl. Instrum. Methods Phys. Res. B 1, 481 (1984).
- (1984) Nucl. Instrum. Methods Phys. Res. B , vol.1 , pp. 481
- Griscom, D.L.¹

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