Evidence of ordered phase of Ge-Si heterostructures by X-ray absorption spectroscopy at Ge L3 edge

Surface Science

Volumn 416, Issue 3, 1998, Pages 466-471

  Castrucci, P ^a   Gunnella, R ^a   Pinto, N ^a   De Crescenzi, M ^a   Sacchi, M ^b   Dufour, G ^c   Rochet, F ^c  

^a UNIVERSITY OF CAMERINO   (Italy)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

Germanium; Near edge extended X ray absorption fine structure (NEXAFS); Photon absorption spectroscopy; Semiconductor semiconductor heterostructures; Silicon; Silicon germanium; Superlattices; X ray absorption spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

NEAR-EDGE EXTENDED X RAY ABSORPTION FINE STRUCTURE (NEXAFS);

HETEROJUNCTIONS;

EID: 0032182643     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00631-1     Document Type: Article

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