Observation of room temperature surface-emitting stimulated emission from GaN:Ge by optical pumping

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6544-6546

  Zhang, X ^a   Kung, P ^a   Saxler, A ^a,b   Walker, D ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000182306     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363674     Document Type: Article

References (25)

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25. s ∼ 1), an electron-hole liquid can be formed at room temperature in GaN with the direct band gap. Therefore the band gap shrinkage due to electron-hole interaction is not considered here.