Electronic structure and temperature dependence of excitons in GaN

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 172-175

  Monemar, B ^a   Buyanova, I A ^a   Bergman, J P ^a   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Bound exciton; Electronic structure; Photoluminescence

Indexed keywords

ELECTRONIC STRUCTURE; NITRIDES; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; THERMAL EFFECTS;

EPITAXIAL STRAIN; GALLIUM NITRIDES; POLARITONS;

EXCITONS;

EID: 0030642655     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01857-0     Document Type: Article

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