Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam epitaxy with an inductively coupled plasma source

Applied Physics Letters

Volumn 70, Issue 7, 1997, Pages 811-813

  Gluschenkov, O ^a   Myoung, J M ^a,b   Shim, K H ^a,b   Kim, K ^a   Figen, Z G ^a   Gao, J ^a   Eden, J G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; NEODYMIUM LASERS; NITROGEN; OPTICAL PUMPING; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; THERMAL DIFFUSION;

CARRIER NUMBER DENSITY; GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; STIMULATED EMISSION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031078554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118230     Document Type: Article

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