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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 132, Issue 1, 1997, Pages 142-146

Lattice location of N in ZnSe by channeling-NRA

(5) Kobayashi, H a Kimura, K b Nishiyama, F c Miwa, S b Yao, T b,d

a SONY CORPORATION (Japan)

b JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

c HIROSHIMA UNIVERSITY (Japan)

d TOHOKU UNIVERSITY (Japan)

Author keywords

Channeling; Ion beam analysis; Lattice location; Nuclear reaction analysis; Semiconductor; ZnSe

Indexed keywords

ANNEALING; CRYSTAL LATTICES; HIGH TEMPERATURE EFFECTS; ION BEAMS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS;

DETECTION LIMITS; ION CHANNELING; NUCLEAR REACTION ANALYSIS (NRA); ZINC SELENIDE;

SEMICONDUCTING FILMS;

EID: 0031250590 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(97)00398-4 Document Type: Article

Times cited : (5)

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