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Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 475-479

Nitrogen dopant site within the ZnSe lattice as studied by ion beam analysis

(5) Kobayashi, H a,e Kimura, K b Nishiyama, F c Miwa, S b Yao, T b,d

a SONY CORPORATION (Japan)

b JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

c HIROSHIMA UNIVERSITY (Japan)

d TOHOKU UNIVERSITY (Japan)

e STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

Channeling; Doping; Ion beam analysis; Lattice location; NRA; ZnSe

Indexed keywords

EID: 0008000722 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/s0022-0248(98)80099-7 Document Type: Article

Times cited : (10)

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